DocumentCode :
3434640
Title :
Impact and measurement of short term threshold instabilities in MOSFETs of analog circuits
Author :
Rott, Karsten ; Schmitt-Landsiedel, Doris ; Reisinger, H. ; Rott, G. ; Georgakos, Georg ; Schluender, C. ; Aresu, Stefano ; Gustin, Wolfgang ; Grasser, Tibor
Author_Institution :
Infineon Technol. AG, Munich, Germany
fYear :
2012
fDate :
14-18 Oct. 2012
Firstpage :
31
Lastpage :
34
Abstract :
Short term threshold instabilities may cause erratic behavior in analog circuits like comparators and analog-to-digital-converters. As conventional characterization procedures have not been appropriately sensitized to such issues, this kind of erratic behavior usually only occurs in products where it is very difficult to identify. Therefore, for example prior to the introduction of a new gate stack, it is essential to do a careful experimental characterization of short term threshold instabilities, which goes beyond standard NBTI or PBTI measurements. A reliable forecast of the effect of threshold instabilities on the performance of analog circuits will require circuit simulations taking the threshold instabilities into account.
Keywords :
MOSFET; analogue circuits; semiconductor device measurement; MOSFET; NBTI measurements; PBTI measurements; analog circuits; analog-to-digital-converters; circuit simulations; comparators; gate stack; short term threshold instability measurement; Analog circuits; Current measurement; Hysteresis; Logic gates; Stress; Stress measurement; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
Conference_Location :
South Lake Tahoe, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4673-2749-7
Type :
conf
DOI :
10.1109/IIRW.2012.6468913
Filename :
6468913
Link To Document :
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