DocumentCode
3434640
Title
Impact and measurement of short term threshold instabilities in MOSFETs of analog circuits
Author
Rott, Karsten ; Schmitt-Landsiedel, Doris ; Reisinger, H. ; Rott, G. ; Georgakos, Georg ; Schluender, C. ; Aresu, Stefano ; Gustin, Wolfgang ; Grasser, Tibor
Author_Institution
Infineon Technol. AG, Munich, Germany
fYear
2012
fDate
14-18 Oct. 2012
Firstpage
31
Lastpage
34
Abstract
Short term threshold instabilities may cause erratic behavior in analog circuits like comparators and analog-to-digital-converters. As conventional characterization procedures have not been appropriately sensitized to such issues, this kind of erratic behavior usually only occurs in products where it is very difficult to identify. Therefore, for example prior to the introduction of a new gate stack, it is essential to do a careful experimental characterization of short term threshold instabilities, which goes beyond standard NBTI or PBTI measurements. A reliable forecast of the effect of threshold instabilities on the performance of analog circuits will require circuit simulations taking the threshold instabilities into account.
Keywords
MOSFET; analogue circuits; semiconductor device measurement; MOSFET; NBTI measurements; PBTI measurements; analog circuits; analog-to-digital-converters; circuit simulations; comparators; gate stack; short term threshold instability measurement; Analog circuits; Current measurement; Hysteresis; Logic gates; Stress; Stress measurement; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
Conference_Location
South Lake Tahoe, CA
ISSN
1930-8841
Print_ISBN
978-1-4673-2749-7
Type
conf
DOI
10.1109/IIRW.2012.6468913
Filename
6468913
Link To Document