• DocumentCode
    3434640
  • Title

    Impact and measurement of short term threshold instabilities in MOSFETs of analog circuits

  • Author

    Rott, Karsten ; Schmitt-Landsiedel, Doris ; Reisinger, H. ; Rott, G. ; Georgakos, Georg ; Schluender, C. ; Aresu, Stefano ; Gustin, Wolfgang ; Grasser, Tibor

  • Author_Institution
    Infineon Technol. AG, Munich, Germany
  • fYear
    2012
  • fDate
    14-18 Oct. 2012
  • Firstpage
    31
  • Lastpage
    34
  • Abstract
    Short term threshold instabilities may cause erratic behavior in analog circuits like comparators and analog-to-digital-converters. As conventional characterization procedures have not been appropriately sensitized to such issues, this kind of erratic behavior usually only occurs in products where it is very difficult to identify. Therefore, for example prior to the introduction of a new gate stack, it is essential to do a careful experimental characterization of short term threshold instabilities, which goes beyond standard NBTI or PBTI measurements. A reliable forecast of the effect of threshold instabilities on the performance of analog circuits will require circuit simulations taking the threshold instabilities into account.
  • Keywords
    MOSFET; analogue circuits; semiconductor device measurement; MOSFET; NBTI measurements; PBTI measurements; analog circuits; analog-to-digital-converters; circuit simulations; comparators; gate stack; short term threshold instability measurement; Analog circuits; Current measurement; Hysteresis; Logic gates; Stress; Stress measurement; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
  • Conference_Location
    South Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4673-2749-7
  • Type

    conf

  • DOI
    10.1109/IIRW.2012.6468913
  • Filename
    6468913