DocumentCode :
3434654
Title :
RF bipolar transistors in CMOS compatible technologies
Author :
Sun, I-Shan Michael ; Ng, Wai Tung ; Mok, Philip K T ; Mochizuki, Hidenori ; Shinomura, Katsumi ; Imai, Hisaya ; Ishikawa, Akira ; Saito, Nobuo ; Miyashita, Kiyoshi ; Tamura, Satoru ; Takasuka, Kaoru
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
fYear :
2001
fDate :
2001
Firstpage :
108
Lastpage :
111
Abstract :
A RF bipolar transistor integrated into a standard 0.35 μm CMOS process is presented. This BiCMOS technology features a single-poly NPN transistor with simulated fτ=16 GHz and BVCEO=6.4 V. With implanted base and no trench isolation, this device is truly compatible with standard CMOS technology and offers good performance compared to previously published results of BiCMOS technologies
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; MMIC; microwave bipolar transistors; semiconductor device models; 16 GHz; 6.4 V; BiCMOS technology; CMOS compatible technologies; CMOS technology; RF bipolar transistor integration; RF bipolar transistors; implanted base; single-poly NPN transistor; standard CMOS process; trench isolation; Baseband; BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Implants; Isolation technology; Radio frequency; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2001. Proceedings. 2001 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-6714-6
Type :
conf
DOI :
10.1109/HKEDM.2001.946929
Filename :
946929
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3434654
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