RF bipolar transistors in CMOS compatible technologies

Author

Sun, I-Shan Michael ; Ng, Wai Tung ; Mok, Philip K T ; Mochizuki, Hidenori ; Shinomura, Katsumi ; Imai, Hisaya ; Ishikawa, Akira ; Saito, Nobuo ; Miyashita, Kiyoshi ; Tamura, Satoru ; Takasuka, Kaoru

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

fYear

2001

fDate

2001

Firstpage

108

Lastpage

111

Abstract

A RF bipolar transistor integrated into a standard 0.35 μm CMOS process is presented. This BiCMOS technology features a single-poly NPN transistor with simulated f_τ=16 GHz and BV_CEO=6.4 V. With implanted base and no trench isolation, this device is truly compatible with standard CMOS technology and offers good performance compared to previously published results of BiCMOS technologies

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; MMIC; microwave bipolar transistors; semiconductor device models; 16 GHz; 6.4 V; BiCMOS technology; CMOS compatible technologies; CMOS technology; RF bipolar transistor integration; RF bipolar transistors; implanted base; single-poly NPN transistor; standard CMOS process; trench isolation; Baseband; BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Implants; Isolation technology; Radio frequency; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. Proceedings. 2001 IEEE Hong Kong

Conference_Location

Hong Kong

Print_ISBN

0-7803-6714-6

Type

conf

DOI

10.1109/HKEDM.2001.946929

Filename

946929