Title :
Reliability of low-k interconnect dielectrics
Author_Institution :
Microsystems Science and Technology, Sandia National Labs
Abstract :
Summary form only given. The talk will be divided in two: Part1: Statistics of BEOL dielectric breakdown • Is the Weibull distribution still viable when the line edge roughness is large in respect to the line-spacing? • Stress dependence of distributions. • Meanings of observed statistical parameters and how to extract the actual parameters that are needed for extrapolation to low failure probabilities at usage conditions.
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4673-2749-7
DOI :
10.1109/IIRW.2012.6468914
