Title :
Millimeter-wave passive components on silicon for wireless communication applications
Author :
Zhao, Y. ; Jin, Y. ; Spirito, M. ; Long, J.R.
Author_Institution :
DIMES, Delft Univ. of Technol., Delft, Netherlands
Abstract :
The performance of on-chip passives and their application at mm-wave frequencies in two key silicon technologies are presented in this paper. Power and linear combiners designed in advanced 130 nm SiGe-BiCMOS and 65 nm CMOS-SOI are used as demonstrators. Multi-port transformer and shielded-CPW-on-SOI power combiners realize insertion loss as low as 0.5 dB and reflected port to port impedance uniformity within 2.5% at 60 GHz in simulation. Linear combiner voltage amplitude and phase imbalances (from simulation) are better than 4.9% and 0.5 ¿, respectively. Test and measurement strategies for the multi-port passives are also described.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; millimetre wave integrated circuits; radiocommunication; silicon-on-insulator; BiCMOS; CMOS-SOI; SiGe; frequency 60 GHz; linear combiners; millimeter-wave passive components; multiport transformer; shielded-CPW-on-SOI power combiners; size 130 nm; size 65 nm; wireless communication applications; CMOS technology; Frequency; Impedance; Insertion loss; Millimeter wave communication; Millimeter wave technology; Power combiners; Silicon; Testing; Wireless communication;
Conference_Titel :
Electronics, Circuits, and Systems, 2009. ICECS 2009. 16th IEEE International Conference on
Conference_Location :
Yasmine Hammamet
Print_ISBN :
978-1-4244-5090-9
Electronic_ISBN :
978-1-4244-5091-6
DOI :
10.1109/ICECS.2009.5410844
