• DocumentCode
    3434803
  • Title

    Avalanche photodiodes for high energy particle tracking in 130 nm CMOS technology

  • Author

    Arbat, A. ; Dièguez, A. ; Gascon, D. ; Trenado, J. ; Garrido, Ll

  • Author_Institution
    Dept. d´´Electron., Univ. de Barcelona, Barcelona, Spain
  • fYear
    2009
  • fDate
    13-16 Dec. 2009
  • Firstpage
    579
  • Lastpage
    582
  • Abstract
    Particle detection can be done with many different sensors. In this case, the particle detector is based on avalanche photodiodes (APDs) integrated on standard CMOS technology. The integration of the sensors allows the possibility to integrate also the processing circuitry, reducing the volume of components, the complexity, and also the cost of the total device. The sensor is based on a double sensor detection to discriminate the inherent noise of APDs. An electrical model of the sensor, including noise modeling of dark counts and afterpulsing, based on fabricated component, has been developed to proof the suitability of the proposed detector circuit.
  • Keywords
    CMOS integrated circuits; avalanche photodiodes; particle detectors; CMOS technology; afterpulsing; avalanche photodiode; dark count noise modeling; double sensor detection; high energy particle tracking; integrated APD circuit; particle detection; size 130 nm; Avalanche photodiodes; CMOS technology; Capacitance; Capacitive sensors; Circuits; Particle tracking; Polarization; Radiation detectors; Semiconductor device noise; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits, and Systems, 2009. ICECS 2009. 16th IEEE International Conference on
  • Conference_Location
    Yasmine Hammamet
  • Print_ISBN
    978-1-4244-5090-9
  • Electronic_ISBN
    978-1-4244-5091-6
  • Type

    conf

  • DOI
    10.1109/ICECS.2009.5410849
  • Filename
    5410849