Title :
Recent results concerning the influence of hydrogen on the bias temperature instability
Author :
Pobegen, Gregor ; Nelhiebel, Michael ; Grasser, Tibor
Author_Institution :
KAI - Kompetenzzentrum fur Automobil- und Industrieelektron., Villach, Austria
Abstract :
Alongside the intensive debate concerning the influence of hydrogen on NBTI we present several details which have received little or no attention in the past. We show experimental evidence that hydrogen does not only passivate interface traps but also positive oxide charges or border traps. Besides passivation, hydrogen increases the overall drift capability of a device under NBTS, thereby increasing the sum of both precursors and activated defects. Furthermore hydrogen passivation has a positive effect on PBTI, presumably through the passivation of pre-existing oxide traps.
Keywords :
hydrogen; interface states; passivation; H; NBTI; NBTS; activated defects; bias temperature instability; border traps; oxide traps; passivate interface traps; passivation; positive oxide charges; Hydrogen; Logic gates; MOSFET circuits; Passivation; Reliability; Silicon; Stress;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4673-2749-7
DOI :
10.1109/IIRW.2012.6468920
