Title :
The influence of emitter efficiency on single transistor latch in silicon-on-insulator MOSFETs
Author :
McDaid, L.J. ; Hall, S. ; Eccleston, W. ; Watkinson, P. ; Alderman, J.C.
Author_Institution :
Dept. of Electr. Eng. & Electron., Liverpool Univ., UK
Abstract :
It is demonstrated that a significant improvement in the breakdown voltage of an SOI (silicon-on-insulator) MOSFET can be achieved by stress-induced damage to the source/body junction. The damage serves to degrade the injection efficiency of this junction and thus suppresses the parasitic lateral bipolar associated with source/body/drain. The experiment indicates the usefulness of source engineering to the latch problem
Keywords :
insulated gate field effect transistors; semiconductor technology; MOSFETs; SOI; Si-SiO2; breakdown voltage; emitter efficiency; injection efficiency; latch problem; parasitic lateral bipolar; single transistor latch; source engineering; source/body junction; stress-induced damage; Annealing; Argon; Degradation; Implants; Latches; MOSFETs; Silicon on insulator technology; Stress; Thickness measurement; Voltage;
Conference_Titel :
SOS/SOI Technology Conference, 1990., 1990 IEEE
Conference_Location :
Key West, FL
Print_ISBN :
0-87942-573-3
DOI :
10.1109/SOSSOI.1990.145751
