• DocumentCode
    3434881
  • Title

    The influence of emitter efficiency on single transistor latch in silicon-on-insulator MOSFETs

  • Author

    McDaid, L.J. ; Hall, S. ; Eccleston, W. ; Watkinson, P. ; Alderman, J.C.

  • Author_Institution
    Dept. of Electr. Eng. & Electron., Liverpool Univ., UK
  • fYear
    1990
  • fDate
    2-4 Oct 1990
  • Firstpage
    141
  • Lastpage
    142
  • Abstract
    It is demonstrated that a significant improvement in the breakdown voltage of an SOI (silicon-on-insulator) MOSFET can be achieved by stress-induced damage to the source/body junction. The damage serves to degrade the injection efficiency of this junction and thus suppresses the parasitic lateral bipolar associated with source/body/drain. The experiment indicates the usefulness of source engineering to the latch problem
  • Keywords
    insulated gate field effect transistors; semiconductor technology; MOSFETs; SOI; Si-SiO2; breakdown voltage; emitter efficiency; injection efficiency; latch problem; parasitic lateral bipolar; single transistor latch; source engineering; source/body junction; stress-induced damage; Annealing; Argon; Degradation; Implants; Latches; MOSFETs; Silicon on insulator technology; Stress; Thickness measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOS/SOI Technology Conference, 1990., 1990 IEEE
  • Conference_Location
    Key West, FL
  • Print_ISBN
    0-87942-573-3
  • Type

    conf

  • DOI
    10.1109/SOSSOI.1990.145751
  • Filename
    145751
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3434881