Title :
Deep submicron CMOS: Characteristics & circuit design
Author_Institution :
Macquarie Univ., North Ryde, NSW, Australia
Abstract :
The article presents 0.13 /spl mu/m device properties for CMOS integrated circuits, including transistors and passives. Circuit design principles and characteristics of RF circuits are covered. Circuit techniques for gain stages are also discussed. The article concludes with some technology predictions.
Keywords :
CMOS integrated circuits; integrated circuit design; 0.13 micron; RF circuit; circuit design; deep submicron CMOS integrated circuit; gain stage; passive device; transistor; CMOS analog integrated circuits; Circuit synthesis; Radio frequency; Semiconductor device modeling;
Conference_Titel :
Circuits and Systems, 2001. Tutorial Guide: ISCAS 2001. The IEEE International Symposium on
Conference_Location :
Sydney, NSW, Australia
Print_ISBN :
0-7803-7113-5
DOI :
10.1109/TUTCAS.2001.946940
