DocumentCode :
3434925
Title :
Low-power digitally-controlled variable gain LNA with high isolation for sub-GHz ISM bands
Author :
Périn, M. ; Aymard, O. ; Darfeuille, S. ; Gamand, P. ; Berland, C.
Author_Institution :
Innovation Centre Radio Freq., NXP Semicond., Caen, France
fYear :
2009
fDate :
13-16 Dec. 2009
Firstpage :
623
Lastpage :
626
Abstract :
A low-power digitally-controlled variable gain low noise amplifier is implemented in a 40-GHz fT 0.25 ¿m BiCMOS process. Wideband input matching independent of the variable gain, as well as high reverse isolation are achieved thanks to a partial feedback technique. The variable gain is based on a resistor-chain gain-control technique, leading to fine gain steps and constant output impedance. It covers the sub-GHz ISM bands for automotive applications such as Remote Keyless Entry. This LNA is designed with 15 gain steps of 1 dB. The simulated results for the maximum gain show a Transducer Power Gain of 16.5 dB, a Noise Figure of 2.4 dB and respective input and output IP3 of -12.1 dBm and +4.5 dBm, while only drawing 1.45 mA from a 2.7 V power supply. The measurement results are slightly degraded because of wire-bonding couplings in the package.
Keywords :
BiCMOS integrated circuits; low noise amplifiers; low-power electronics; millimetre wave amplifiers; BiCMOS process; automotive applications; constant output impedance; current 1.45 mA; fine gain steps; frequency 40 GHz; gain 16.5 dB; low noise amplifier; low-power digitally-controlled variable gain LNA; noise figure 2.4 dB; partial feedback technique; remote keyless entry; resistor-chain gain-control technique; size 0.25 mum; sub-GHz ISM bands; transducer power gain; voltage 2.7 V; wideband input matching; wire-bonding couplings; Automotive applications; BiCMOS integrated circuits; Broadband amplifiers; Feedback; Gain; Impedance matching; Low-noise amplifiers; Noise figure; Transducers; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits, and Systems, 2009. ICECS 2009. 16th IEEE International Conference on
Conference_Location :
Yasmine Hammamet
Print_ISBN :
978-1-4244-5090-9
Electronic_ISBN :
978-1-4244-5091-6
Type :
conf
DOI :
10.1109/ICECS.2009.5410856
Filename :
5410856
Link To Document :
بازگشت