Title :
Residual defects in SIMOX: threading dislocations and pipes
Author :
Roitman, P. ; Edelstein, M. ; Krause, S. ; Visitserngtrukul, S.
Author_Institution :
NIST, Gaithersburg, MD, USA
Abstract :
Some techniques are discussed for monitoring dislocations and stacking faults in SIMOX (separation by implantation of oxygen) films. Also, a different type of defect, a silicon pipe running through the buried oxide, has been observed. The origin of these defects and a technique for detecting them are described
Keywords :
dislocations; elemental semiconductors; semiconductor-insulator boundaries; silicon; stacking faults; SIMOX; Si-SiO2; buried oxide; pipes; residual defects; stacking faults; threading dislocations; Annealing; Circuit faults; Etching; Implants; Monitoring; NIST; Scanning electron microscopy; Semiconductor films; Silicon; Stacking;
Conference_Titel :
SOS/SOI Technology Conference, 1990., 1990 IEEE
Conference_Location :
Key West, FL
Print_ISBN :
0-87942-573-3
DOI :
10.1109/SOSSOI.1990.145758
