Title :
A dual mode 2.4-GHz CMOS low noise amplifier employing body biasing
Author :
Aya, Mabrouki ; Thierry, Taris ; Yann, Deval ; Jean-Baptiste, Begueret
Author_Institution :
IMS Lab., Univ. of Bordeaux, Talence, France
Abstract :
This paper presents a dual mode CMOS low noise amplifier (LNA) suitable for WiMAX (Worldwide Interoperability for Microwave Access) applications, 2.4 GHz. The design concept is based on the novel idea of body. Measurement results show that in the high gain mode, for VBS=0.3 V, the cascode LNA, implemented in a 0.13 ¿m CMOS standard process, exhibits a 14 dB power gain, a 3.6 dB noise figure (NF) and -4.6 dBm of third order intercept point (IIP3) for a 4 mA current consumption under 1 V supply. Tuning VBS to -0.55 V, switches the LNA into the low gain mode. It achieves 9 dB power gain, 6.2 dB NF and 11 dBm IIP3 under a constrained power consumption of 2 mW.
Keywords :
CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; low noise amplifiers; WiMAX; body biasing; cascode LNA; current 4 mA; dual mode CMOS low noise amplifier; frequency 2.4 GHz; gain 14 dB; gain 9 dB; low gain mode; noise figure 3.6 dB; noise figure 6.2 dB; power 2 mW; size 0.13 mum; third order intercept point; voltage -0.55 V; voltage 1 V; worldwide interoperability for microwave access; CMOS process; Current measurement; Gain measurement; Low-noise amplifiers; Measurement standards; Microwave amplifiers; Noise figure; Noise measurement; Power measurement; WiMAX;
Conference_Titel :
Electronics, Circuits, and Systems, 2009. ICECS 2009. 16th IEEE International Conference on
Conference_Location :
Yasmine Hammamet
Print_ISBN :
978-1-4244-5090-9
Electronic_ISBN :
978-1-4244-5091-6
DOI :
10.1109/ICECS.2009.5410861
