A New Two-Stage Ultra-Wide-Band 1-10-GHz Low Noise Amplifier

Author

Wang Chunhua ; Du Chao

Author_Institution

Sch. of Comput. & Commun., Hunan Univ., Changsha

fYear

2008

fDate

12-14 Oct. 2008

Firstpage

1

Lastpage

4

Abstract

A new lower complexity ultra-wide-band 1-10-GHz low-noise amplifier is presented in this paper. This LNA only consists of two simple amplifiers with an inter-stage inductor connected. The first stage is a common-gate amplifier that is used to attain the wideband input matching and low noise. A common-source amplifier with shunt-peaked load as the second stage achieves high gain and wideband output matching simultaneously that does not need the source follower. Designed in the TSMC 0.18 mum RFCMOS technology, this proposed UWB LNA achieves the maximum power gain (S21) of 12.1 dB with the 3-dB band from 1 to 10 GHz and input/output reflection coefficient (S11 ,S22) of less than -10 dB from 1 to 10 GHz.The minimum noise figure is 3.8 dB.An IIP3 is -4.1 dBm at 5 GHz.The power dissipation is 12.6 mW from a 1.5-V supply voltage.

Keywords

low noise amplifiers; ultra wideband communication; UWB LNA; common-gate amplifier; frequency 1 GHz to 10 GHz; frequency 5 GHz; gain 12.1 dB; interstage inductor; low noise amplifier; power 12.6 mW; size 0.18 micron; ultra wideband communication; voltage 1.5 V; Bandwidth; Broadband amplifiers; Circuit noise; FCC; High power amplifiers; Impedance matching; Inductors; Low-noise amplifiers; Noise figure; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Communications, Networking and Mobile Computing, 2008. WiCOM '08. 4th International Conference on

Conference_Location

Dalian

Print_ISBN

978-1-4244-2107-7

Electronic_ISBN

978-1-4244-2108-4

Type

conf

DOI

10.1109/WiCom.2008.566

Filename

4678474