DocumentCode
3435085
Title
HBT reliability modeling strategy for BICMOS RF and mmW applications
Author
Ighilahriz, S. ; Cacho, F. ; Huard, Vincent ; Moquillon, Laurence ; Benech, Ph ; Fournier, J.M.
Author_Institution
STMicroelectron., Crolles, France
fYear
2012
fDate
14-18 Oct. 2012
Firstpage
109
Lastpage
112
Abstract
Heterojunction bipolar transistors, SiGe, Reliability, DC and AC stress, Dynamic parameters, Low frequency noise, Mixer, Voltage controlled oscillator, Low noise amplifier, RF stress, SOA.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; bipolar MIMIC; heterojunction bipolar transistors; integrated circuit reliability; low noise amplifiers; millimetre wave amplifiers; millimetre wave bipolar transistors; millimetre wave mixers; semiconductor device models; semiconductor materials; stress analysis; voltage-controlled oscillators; AC stress; BICMOS RF application; DC stress; HBT reliability modeling strategy; RF stress; SOA; SiGe; heterojunction bipolar transistors; low frequency noise; low noise amplifier; mixer; voltage controlled oscillator; Aging; Degradation; Frequency measurement; Heterojunction bipolar transistors; Integrated circuit reliability; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
Conference_Location
South Lake Tahoe, CA
ISSN
1930-8841
Print_ISBN
978-1-4673-2749-7
Type
conf
DOI
10.1109/IIRW.2012.6468931
Filename
6468931
Link To Document