Title :
HBT reliability modeling strategy for BICMOS RF and mmW applications
Author :
Ighilahriz, S. ; Cacho, F. ; Huard, Vincent ; Moquillon, Laurence ; Benech, Ph ; Fournier, J.M.
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
Heterojunction bipolar transistors, SiGe, Reliability, DC and AC stress, Dynamic parameters, Low frequency noise, Mixer, Voltage controlled oscillator, Low noise amplifier, RF stress, SOA.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bipolar MIMIC; heterojunction bipolar transistors; integrated circuit reliability; low noise amplifiers; millimetre wave amplifiers; millimetre wave bipolar transistors; millimetre wave mixers; semiconductor device models; semiconductor materials; stress analysis; voltage-controlled oscillators; AC stress; BICMOS RF application; DC stress; HBT reliability modeling strategy; RF stress; SOA; SiGe; heterojunction bipolar transistors; low frequency noise; low noise amplifier; mixer; voltage controlled oscillator; Aging; Degradation; Frequency measurement; Heterojunction bipolar transistors; Integrated circuit reliability; Stress;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4673-2749-7
DOI :
10.1109/IIRW.2012.6468931
