Influence of γ irradiation on ESR active defects in SIMOX structures

Author

Stesmans, A. ; Revesz, A.G. ; Hughes, H.L.

Author_Institution

Dept. of Phys., Leuven Univ., Belgium

fYear

1990

fDate

2-4 Oct 1990

Firstpage

162

Lastpage

163

Abstract

Silicon-on-insulator (SOI) structures formed on (001) Si wafers by single-step O⁺ implantation were studied by low temperature electron spin resonance (ESR). The spectrum exhibits a strong isotropic line of g=2.0059 with spin density N_s=7.1×10¹³ cm^-2, originating from Si dangling bonds (DBs) in a-Si regions. γ irradiation to a dose of 1 Mrad (Si) enhances this signal by a factor of 2.5 and generates a new anisotropic line of N_s=1.1×10¹² cm^-2 and g=1.99989±0.00004 for magnetic induction parallel to [001]. The latter is assigned to an intrinsic double donor which, rather than being physically generated by irradiation, is ESR activated by changing its ionization state through Si band bending tuning by modification of charge in the buried oxide

Keywords

dangling bonds; gamma-ray effects; paramagnetic resonance of defects; semiconductor-insulator boundaries; γ irradiation; 1000000 rad; ESR active defects; SIMOX structures; SOI; Si band bending; Si dangling bonds; Si wafers; Si-SiO₂; buried oxide; intrinsic double donor; ionization state; single-step O⁺ implantation; spin density; strong isotropic line; Anisotropic magnetoresistance; Annealing; Capacitive sensors; Density measurement; Fabrication; Measurement standards; Paramagnetic resonance; Powders; Signal analysis; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1990., 1990 IEEE

Conference_Location

Key West, FL

Print_ISBN

0-87942-573-3

Type

conf

DOI

10.1109/SOSSOI.1990.145762

Filename

145762