Title :
Direct experimental evidence for a dominant hole trapping center in SIMOX oxides
Author :
Conley, John F. ; Lenahan, P.M. ; Roitman, P.
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
Abstract :
Experimental evidence is presented that indicates that E´ centers or E´-like centers play an important role in hole trapping in SIMOX (separation by implantation of oxygen) oxides. The E´ center is a silicon atom back-bonded to three oxygen atoms; in thermally grown SiO2 films on silicon it is the dominant deep hole trap and is almost certainly a hole trapped in an oxygen vacancy. The SIMOX samples used had buried oxides approximately 4000 Å thick. The trapping was explored using a combination of electron paramagnetic resonance (EPR) and vacuum ultraviolet (hc/λ=10.2 eV) and ultraviolet (hc/λ=5 eV) irradiation sequences
Keywords :
deep levels; hole traps; insulating thin films; paramagnetic resonance of defects; semiconductor-insulator boundaries; silicon compounds; 4000 Å; E´ centers; EPR; O vacancy; SIMOX oxides; SiO2-Si; buried oxides; deep hole trap; dominant hole trapping center; separation by implantation of oxygen; ultraviolet irradiation; vacuum ultraviolet irradiation; Capacitance; Corona; Electron traps; Kelvin; Paramagnetic materials; Paramagnetic resonance; Probes; Signal generators; Silicon; Temperature;
Conference_Titel :
SOS/SOI Technology Conference, 1990., 1990 IEEE
Conference_Location :
Key West, FL
Print_ISBN :
0-87942-573-3
DOI :
10.1109/SOSSOI.1990.145763
