Very High Efficiency 13.56 MHz RFID Input Stage Voltage Multipliers Based On Ultra Low Power MOS Diodes

Author

Gosset, Geoffroy ; Rue, Bertrand ; Flandre, Denis

Author_Institution

Microelectron. Lab. (DICE), Univ. catholique de Louvain, Louvain-la-Neuve

fYear

2008

fDate

16-17 April 2008

Firstpage

134

Lastpage

140

Abstract

This paper presents an ULP (ultra-low-power) diode based voltage multiplier which is used to convert RF input signal to DC supply voltage. This uses an input signal of 1 V peak to peak and 13.56 MHz frequency and reaches 2 to 3 V at its output with 10 diodes. The IC is implemented in a 2 mum multiple- threshold voltage SOI CMOS technology. The IC outperforms, by a factor larger than 2, classical MOS diodes based voltage multiplier, implemented on the same technology, from the point of view of efficiency (minimum RF input power for given output specifications) and impedance.

Keywords

CMOS analogue integrated circuits; diodes; radiofrequency identification; silicon-on-insulator; CMOS technology; RFID; SOI; frequency 13.56 MHz; low power MOS diodes; voltage multipliers; CMOS process; CMOS technology; Capacitance; Coils; Radio frequency; Radiofrequency identification; Rectifiers; Schottky diodes; Threshold voltage; USA Councils; Radio frequency identification (RFID); Rectifier; Ultra-Low-Power CMOS; voltage multiplier;

fLanguage

English

Publisher

ieee

Conference_Titel

RFID, 2008 IEEE International Conference on

Conference_Location

Las Vegas, NV

Print_ISBN

978-1-4244-1711-7

Electronic_ISBN

978-1-4244-1712-4

Type

conf

DOI

10.1109/RFID.2008.4519378

Filename

4519378