Title :
Very High Efficiency 13.56 MHz RFID Input Stage Voltage Multipliers Based On Ultra Low Power MOS Diodes
Author :
Gosset, Geoffroy ; Rue, Bertrand ; Flandre, Denis
Author_Institution :
Microelectron. Lab. (DICE), Univ. catholique de Louvain, Louvain-la-Neuve
Abstract :
This paper presents an ULP (ultra-low-power) diode based voltage multiplier which is used to convert RF input signal to DC supply voltage. This uses an input signal of 1 V peak to peak and 13.56 MHz frequency and reaches 2 to 3 V at its output with 10 diodes. The IC is implemented in a 2 mum multiple- threshold voltage SOI CMOS technology. The IC outperforms, by a factor larger than 2, classical MOS diodes based voltage multiplier, implemented on the same technology, from the point of view of efficiency (minimum RF input power for given output specifications) and impedance.
Keywords :
CMOS analogue integrated circuits; diodes; radiofrequency identification; silicon-on-insulator; CMOS technology; RFID; SOI; frequency 13.56 MHz; low power MOS diodes; voltage multipliers; CMOS process; CMOS technology; Capacitance; Coils; Radio frequency; Radiofrequency identification; Rectifiers; Schottky diodes; Threshold voltage; USA Councils; Radio frequency identification (RFID); Rectifier; Ultra-Low-Power CMOS; voltage multiplier;
Conference_Titel :
RFID, 2008 IEEE International Conference on
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-4244-1711-7
Electronic_ISBN :
978-1-4244-1712-4
DOI :
10.1109/RFID.2008.4519378
