DocumentCode
3435658
Title
Deep sub-micron IDDQ testing: issues and solutions
Author
Sachdev, Manoj
Author_Institution
Philips Res. Lab., Eindhoven, Netherlands
fYear
1997
fDate
17-20 Mar 1997
Firstpage
271
Lastpage
278
Abstract
The effectiveness of IDDQ testing in deep sub-micron is threatened by the increased transistor sub-threshold leakage current. In this article, we survey possible solutions and propose a deep sub-micron IDDQ test mode. The methodology provides means for unambiguous measurements of IDDQ components and defect diagnosis. The effectiveness of the test mode is demonstrated with a real life example
Keywords
CMOS integrated circuits; electric current measurement; integrated circuit testing; leakage currents; CMOS IC; deep submicron IDDQ testing; defect diagnosis; transistor sub-threshold leakage current; CMOS technology; Circuit testing; Electronic switching systems; Intrusion detection; Laboratories; Leakage current; Life testing; Manufacturing; P-n junctions; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
European Design and Test Conference, 1997. ED&TC 97. Proceedings
Conference_Location
Paris
ISSN
1066-1409
Print_ISBN
0-8186-7786-4
Type
conf
DOI
10.1109/EDTC.1997.582370
Filename
582370
Link To Document