• DocumentCode
    3435658
  • Title

    Deep sub-micron IDDQ testing: issues and solutions

  • Author

    Sachdev, Manoj

  • Author_Institution
    Philips Res. Lab., Eindhoven, Netherlands
  • fYear
    1997
  • fDate
    17-20 Mar 1997
  • Firstpage
    271
  • Lastpage
    278
  • Abstract
    The effectiveness of IDDQ testing in deep sub-micron is threatened by the increased transistor sub-threshold leakage current. In this article, we survey possible solutions and propose a deep sub-micron IDDQ test mode. The methodology provides means for unambiguous measurements of IDDQ components and defect diagnosis. The effectiveness of the test mode is demonstrated with a real life example
  • Keywords
    CMOS integrated circuits; electric current measurement; integrated circuit testing; leakage currents; CMOS IC; deep submicron IDDQ testing; defect diagnosis; transistor sub-threshold leakage current; CMOS technology; Circuit testing; Electronic switching systems; Intrusion detection; Laboratories; Leakage current; Life testing; Manufacturing; P-n junctions; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    European Design and Test Conference, 1997. ED&TC 97. Proceedings
  • Conference_Location
    Paris
  • ISSN
    1066-1409
  • Print_ISBN
    0-8186-7786-4
  • Type

    conf

  • DOI
    10.1109/EDTC.1997.582370
  • Filename
    582370