DocumentCode :
3435658
Title :
Deep sub-micron IDDQ testing: issues and solutions
Author :
Sachdev, Manoj
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
fYear :
1997
fDate :
17-20 Mar 1997
Firstpage :
271
Lastpage :
278
Abstract :
The effectiveness of IDDQ testing in deep sub-micron is threatened by the increased transistor sub-threshold leakage current. In this article, we survey possible solutions and propose a deep sub-micron IDDQ test mode. The methodology provides means for unambiguous measurements of IDDQ components and defect diagnosis. The effectiveness of the test mode is demonstrated with a real life example
Keywords :
CMOS integrated circuits; electric current measurement; integrated circuit testing; leakage currents; CMOS IC; deep submicron IDDQ testing; defect diagnosis; transistor sub-threshold leakage current; CMOS technology; Circuit testing; Electronic switching systems; Intrusion detection; Laboratories; Leakage current; Life testing; Manufacturing; P-n junctions; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
European Design and Test Conference, 1997. ED&TC 97. Proceedings
Conference_Location :
Paris
ISSN :
1066-1409
Print_ISBN :
0-8186-7786-4
Type :
conf
DOI :
10.1109/EDTC.1997.582370
Filename :
582370
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3435658
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