DocumentCode :
3435660
Title :
Making memristors a reality: Advances in physical understanding and device integration
Author :
Nickel, Janice H.
Author_Institution :
Cognitive Systems Laboratory Hewlett-Packard Laboratories
fYear :
2012
fDate :
14-18 Oct. 2012
Firstpage :
203
Lastpage :
203
Abstract :
Summary form only given. Memristors are the fourth fundamental circuit element which was predicted in the early 1970´s and reduced to practice in 2008. Unlike capacitors or inductors, memristors do not store charge or energy, but do store information. This quality makes them a candidate for next generation memory technology, potentially replacing Flash and DRAM, whose ability to scale to future technology nodes is limited by the fact that they rely on stored charge. Because of the ability to create highly non-linear memristive devices, this technology is feasible for true crossbar memories -without requiring select transistors.
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
Conference_Location :
South Lake Tahoe, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4673-2749-7
Type :
conf
DOI :
10.1109/IIRW.2012.6468957
Filename :
6468957
Link To Document :
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