DocumentCode :
3435816
Title :
DG summary: Resistive memories
Author :
Ramaswamy, Nirmal ; Wu, Yi
Author_Institution :
Micron
fYear :
2012
fDate :
14-18 Oct. 2012
Firstpage :
220
Lastpage :
220
Abstract :
The DG on resistive memories took place on the evening of Oct. 16, 2012, with approximately fourteen attendees. Various aspects of RRAM were discussed.
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
Conference_Location :
South Lake Tahoe, CA, USA
ISSN :
1930-8841
Print_ISBN :
978-1-4673-2749-7
Type :
conf
DOI :
10.1109/IIRW.2012.6468965
Filename :
6468965
Link To Document :
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