• DocumentCode
    3435816
  • Title

    DG summary: Resistive memories

  • Author

    Ramaswamy, Nirmal ; Wu, Yi

  • Author_Institution
    Micron
  • fYear
    2012
  • fDate
    14-18 Oct. 2012
  • Firstpage
    220
  • Lastpage
    220
  • Abstract
    The DG on resistive memories took place on the evening of Oct. 16, 2012, with approximately fourteen attendees. Various aspects of RRAM were discussed.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
  • Conference_Location
    South Lake Tahoe, CA, USA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4673-2749-7
  • Type

    conf

  • DOI
    10.1109/IIRW.2012.6468965
  • Filename
    6468965
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3435816