Title :
2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498)
Abstract :
The following topics were discussed: compound semiconductor characterisation; materials integration; simulation studies; epitaxy and in-situ processing; quantum effects and devices; heterostructure devices; emitter science; wide band gap materials and devices
Keywords :
epitaxial growth; luminescence; quantum interference devices; quantum interference phenomena; semiconductor device models; semiconductor growth; semiconductor heterojunctions; semiconductor materials; wide band gap semiconductors; characterisation; compound semiconductor; emitter science; epitaxy; heterostructure devices; in-situ processing; materials integration; quantum devices; quantum effects; simulation studies; wide band gap materials;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947117
