Title :
Comparative study of recent advances in power amplification devices and circuits for wireless communication infrastructure
Author :
Hammi, Oualid ; Ghannouchi, Fadhel M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Calgary, Calgary, AB, Canada
Abstract :
This paper presents recent advances in power amplification devices and circuits with application to wireless communication infrastructure. A comparative analysis of the two leading technologies (LDMOS and GaN) is first presented. It is shown that GaN technology enables the use of power amplifiers circuits that requires harmonic loading at frequencies higher than 2 GHz. Then, power amplifiers classes including class D, E, and F are presented along with a thorough overview of recent achievements in terms of efficiency.
Keywords :
MOSFET; gallium compounds; microwave power amplifiers; mobile communication; wide band gap semiconductors; GaN; LDMOS; comparative analysis; power amplification devices; power amplifier circuits; wireless communication infrastructure; Circuits; Costs; FETs; Frequency; Gallium nitride; High power amplifiers; Operational amplifiers; Power amplifiers; Power engineering and energy; Wireless communication; GaN; LDMOS; nonlinearity; power amplifier; switching mode; transistor;
Conference_Titel :
Electronics, Circuits, and Systems, 2009. ICECS 2009. 16th IEEE International Conference on
Conference_Location :
Yasmine Hammamet
Print_ISBN :
978-1-4244-5090-9
Electronic_ISBN :
978-1-4244-5091-6
DOI :
10.1109/ICECS.2009.5410913