• DocumentCode
    3436097
  • Title

    Comparative study of recent advances in power amplification devices and circuits for wireless communication infrastructure

  • Author

    Hammi, Oualid ; Ghannouchi, Fadhel M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Calgary, Calgary, AB, Canada
  • fYear
    2009
  • fDate
    13-16 Dec. 2009
  • Firstpage
    379
  • Lastpage
    382
  • Abstract
    This paper presents recent advances in power amplification devices and circuits with application to wireless communication infrastructure. A comparative analysis of the two leading technologies (LDMOS and GaN) is first presented. It is shown that GaN technology enables the use of power amplifiers circuits that requires harmonic loading at frequencies higher than 2 GHz. Then, power amplifiers classes including class D, E, and F are presented along with a thorough overview of recent achievements in terms of efficiency.
  • Keywords
    MOSFET; gallium compounds; microwave power amplifiers; mobile communication; wide band gap semiconductors; GaN; LDMOS; comparative analysis; power amplification devices; power amplifier circuits; wireless communication infrastructure; Circuits; Costs; FETs; Frequency; Gallium nitride; High power amplifiers; Operational amplifiers; Power amplifiers; Power engineering and energy; Wireless communication; GaN; LDMOS; nonlinearity; power amplifier; switching mode; transistor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits, and Systems, 2009. ICECS 2009. 16th IEEE International Conference on
  • Conference_Location
    Yasmine Hammamet
  • Print_ISBN
    978-1-4244-5090-9
  • Electronic_ISBN
    978-1-4244-5091-6
  • Type

    conf

  • DOI
    10.1109/ICECS.2009.5410913
  • Filename
    5410913