Title :
Low strain sputtered polysilicon for micromechanical structures
Author :
Abe, Takeshi ; Reed, Michael L.
Author_Institution :
Frontier Technol. Res. Inst., Tokyo Gas Co. Ltd., Yokohama, Japan
Abstract :
DC-magnetron sputtering silicon along with a post deposition annealing treatment is described as an alternative to LPCVD polysilicon which is commonly used as a structural material for surface micromachined devices. The sputtered silicon shows a small residual stress (compressive strain: less than 5.6×10-5) and a very smooth surface (average roughness: 25 Å) which is inherently difficult to achieve with the LPCVD method. No need for pyrophoric silane and higher deposition rates are additional advantages over the conventional method
Keywords :
annealing; elemental semiconductors; internal stresses; micromachining; micromechanical devices; semiconductor thin films; silicon; sputter deposition; sputtered coatings; surface topography; DC-magnetron sputtering; Si; compressive strain; elemental semiconductor; low strain sputtered polysilicon; micromechanical structures; post deposition annealing treatment; simple fabrication method; small residual stress; surface micromachined devices; surface roughness; very smooth surface; Annealing; Capacitive sensors; Micromachining; Micromechanical devices; Residual stresses; Rough surfaces; Silicon; Sputtering; Surface roughness; Temperature;
Conference_Titel :
Micro Electro Mechanical Systems, 1996, MEMS '96, Proceedings. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems. IEEE, The Ninth Annual International Workshop on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-2985-6
DOI :
10.1109/MEMSYS.1996.493990
