Title :
Sputtered high |d31| coefficient PZT thin film for microactuators
Author :
Sakata, M. ; Wakabayashi, S. ; Goto, H. ; Totani, H. ; Takeuchi, M. ; Yada, T.
Author_Institution :
Central R&D Lab., Omron Corp., Ibaraki, Japan
Abstract :
High |d31| coefficient PZT thin film for Si-based microactuators has been developed. Piezoelectric coefficient d31 of around -100 pC/N was obtained and it is comparable to that of thick film or bulk PZT. The film was deposited on Pt/Ti/LTO/Si substrate by magnetron sputtering and annealed for obtaining perovskite structure. It was made clear that a ⟨111⟩ strongly oriented film has a higher |d31| coefficient. Crystal orientation preference was controlled by ramp rate at post anneal process. Built-in stress and Young´s modulus of PZT thin film have also been evaluated. It was shown that post anneal process significantly increases both mechanical characteristics. 10 minutes-annealed PZT thin film which has d31 of -100 pC/N has a built-in stress of 380 MPa and a Young´s modulus of 75 GPa
Keywords :
Young´s modulus; annealing; lead compounds; microactuators; piezoceramics; piezoelectric actuators; piezoelectric thin films; sputter deposition; sputtered coatings; PZT; PbZrO3TiO3; Pt/Ti/LTO/Si substrate; Si; Young´s modulus; built-in stress; crystal orientation preference; high performance film; high piezoelectric coefficient; magnetron sputtering; microactuators; perovskite structure; piezoelectric actuation; post anneal process; sputtered thin film; strongly oriented film; Annealing; Lead; Microactuators; Nonvolatile memory; Piezoelectric actuators; Piezoelectric films; Sputtering; Substrates; Tensile stress; Zirconium;
Conference_Titel :
Micro Electro Mechanical Systems, 1996, MEMS '96, Proceedings. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems. IEEE, The Ninth Annual International Workshop on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-2985-6
DOI :
10.1109/MEMSYS.1996.493991
