Title :
External electronic and optical evidence for internal quantum transport effects in BH-MQW lasers
Author :
Ban, Dayan ; Sargent, Edward H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Abstract :
We report an anomalous temperature-dependence in the efficiency and threshold current of multi-quantum well buried heterostructure lasers between 60 K and 190 K. The behaviour is accompanied by sharp, discrete features in differential efficiency and differential resistance. We propose an explanation in terms of impeded interwell transport and the establishment of a strongly nonuniform distribution of carriers among the quantum wells
Keywords :
carrier density; electrical resistivity; quantum well lasers; semiconductor device measurement; semiconductor superlattices; 60 to 190 K; BH-MQW lasers; anomalous temperature-dependence; differential efficiency; differential resistance; efficiency; impeded interwell transport; internal quantum transport effects; multi-quantum well buried heterostructure lasers; quantum wells; strongly nonuniform carrier distribution; threshold current; Fiber lasers; Impedance; Laser theory; Quantum well devices; Quantum well lasers; Radiative recombination; Semiconductor lasers; Space exploration; Temperature distribution; Threshold current;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947128
