External electronic and optical evidence for internal quantum transport effects in BH-MQW lasers

Author

Ban, Dayan ; Sargent, Edward H.

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

fYear

2000

fDate

2000

Firstpage

55

Lastpage

60

Abstract

We report an anomalous temperature-dependence in the efficiency and threshold current of multi-quantum well buried heterostructure lasers between 60 K and 190 K. The behaviour is accompanied by sharp, discrete features in differential efficiency and differential resistance. We propose an explanation in terms of impeded interwell transport and the establishment of a strongly nonuniform distribution of carriers among the quantum wells

Keywords

carrier density; electrical resistivity; quantum well lasers; semiconductor device measurement; semiconductor superlattices; 60 to 190 K; BH-MQW lasers; anomalous temperature-dependence; differential efficiency; differential resistance; efficiency; impeded interwell transport; internal quantum transport effects; multi-quantum well buried heterostructure lasers; quantum wells; strongly nonuniform carrier distribution; threshold current; Fiber lasers; Impedance; Laser theory; Quantum well devices; Quantum well lasers; Radiative recombination; Semiconductor lasers; Space exploration; Temperature distribution; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947128

Filename

947128