• DocumentCode
    3436289
  • Title

    Silicon-silicon anodic-bonding with intermediate glass layers using spin-on glasses

  • Author

    Quenzer, H.J. ; Dell, C. ; Wagner, B.

  • Author_Institution
    Fraunhofer Inst. fur Siliziumtechnologie, Berlin, Germany
  • fYear
    1996
  • fDate
    11-15 Feb 1996
  • Firstpage
    272
  • Lastpage
    276
  • Abstract
    This paper presents for the first time the preparation of glass layers, suitable for the anodic bonding of two silicon substrates using a spin-on glass. In this process a liquid sol solution is used within a spin coating process. The solution is a mixture based on silica sol, organic silicon containing compounds, like TEOS (Tetraethylorthosilicate), and a sodium salt all dissolved in ethanol. After a careful thermal treatment, silica films containing up to 5% wt. Na2O (sodium oxide) can be obtained with a thickness in the range from 600 nm to 1000 nm in one deposition step. The spin-on glass films are very smooth. Anodic bonding of two silicon substrates is possible with all films either prepared at temperatures of 420°C, 540°C or even higher
  • Keywords
    anodisation; elemental semiconductors; glass; micromachining; micromechanical devices; silicon; sol-gel processing; wafer bonding; 420 C; 540 C; 600 to 1000 nm; Si; Si-Si; anodic-bonding; elemental semiconductor; ethanol dissolved; intermediate glass layers; liquid sol solution; micromachining; silica films; silica-TEOS-sodium salt mixture; spin coating process; spin-on glasses; wafer bonding; Bonding processes; Boron; Coatings; Fabrication; Glass; Silicon compounds; Sputtering; Substrates; Temperature; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 1996, MEMS '96, Proceedings. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems. IEEE, The Ninth Annual International Workshop on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7803-2985-6
  • Type

    conf

  • DOI
    10.1109/MEMSYS.1996.493993
  • Filename
    493993