DocumentCode
3436289
Title
Silicon-silicon anodic-bonding with intermediate glass layers using spin-on glasses
Author
Quenzer, H.J. ; Dell, C. ; Wagner, B.
Author_Institution
Fraunhofer Inst. fur Siliziumtechnologie, Berlin, Germany
fYear
1996
fDate
11-15 Feb 1996
Firstpage
272
Lastpage
276
Abstract
This paper presents for the first time the preparation of glass layers, suitable for the anodic bonding of two silicon substrates using a spin-on glass. In this process a liquid sol solution is used within a spin coating process. The solution is a mixture based on silica sol, organic silicon containing compounds, like TEOS (Tetraethylorthosilicate), and a sodium salt all dissolved in ethanol. After a careful thermal treatment, silica films containing up to 5% wt. Na2O (sodium oxide) can be obtained with a thickness in the range from 600 nm to 1000 nm in one deposition step. The spin-on glass films are very smooth. Anodic bonding of two silicon substrates is possible with all films either prepared at temperatures of 420°C, 540°C or even higher
Keywords
anodisation; elemental semiconductors; glass; micromachining; micromechanical devices; silicon; sol-gel processing; wafer bonding; 420 C; 540 C; 600 to 1000 nm; Si; Si-Si; anodic-bonding; elemental semiconductor; ethanol dissolved; intermediate glass layers; liquid sol solution; micromachining; silica films; silica-TEOS-sodium salt mixture; spin coating process; spin-on glasses; wafer bonding; Bonding processes; Boron; Coatings; Fabrication; Glass; Silicon compounds; Sputtering; Substrates; Temperature; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 1996, MEMS '96, Proceedings. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems. IEEE, The Ninth Annual International Workshop on
Conference_Location
San Diego, CA
Print_ISBN
0-7803-2985-6
Type
conf
DOI
10.1109/MEMSYS.1996.493993
Filename
493993
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