Resonance cavity enhanced HIWIP FIR detectors

Author

Perera, A.G.U. ; Korotkov, A.L. ; Shen, W.Z. ; Liu, H.C. ; Buchahan, M.

Author_Institution

Dept. of Phys. & Astron., Georgia State Univ., Atlanta, GA, USA

fYear

2000

fDate

2000

Firstpage

73

Lastpage

78

Abstract

Performance improvements due to an optical cavity architecture in homojunction interfacial workfunction internal photoemission far infrared detectors are presented. The effect of device parameters on the performance is discussed to obtain optimized detection. The intrinsic region thickness and the bottom contact are used to obtain the cavity effect. Designs are given for reduced dark current (10^-17 A) devices by eliminating tunneling for 270 μm cutoff detector at 1.4 K at a bias field of 400 V/cm. Increased responsivity due to increased absorption is experimentally verified by using detector structures with different distances from the top emitter to the bottom contact layer

Keywords

cavity resonators; dark conductivity; infrared detectors; photoemission; semiconductor junctions; work function; 1.4 K; 1E-17 A; 270 mum; bias field; bottom contact; cavity effect; cutoff detector; device parameters; homojunction interfacial workfunction internal photoemission far infrared detectors; intrinsic region thickness; optical cavity architecture; optimized detection; performance; reduced dark current; resonance cavity enhanced HIWIP FIR detectors; responsivity; tunneling; Astronomy; Dark current; Doping; Electromagnetic wave absorption; Finite impulse response filter; Infrared detectors; Optical noise; Photoelectricity; Physics; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947131

Filename

947131