Title :
Ordering dependence of carrier lifetimes and ordered states of Ga 0.52In0.48P/GaAs with degree of order ⩽0.64
Author :
Sasaki, A. ; Tsuchida, K. ; Liu, X.Q. ; Ohno, N. ; Narukawa, Y. ; Kawakami, Y. ; Fujita, Sg. ; Hsu, Y. ; Fetzer, C. ; String, G.B.
Author_Institution :
Dept. of Electron., Acad. Frontier Promotion Center, Neyagawa, Japan
Abstract :
The full width at half maximum (FWHM) of photoluminescence (PL) spectra and the carrier lifetime of spontaneously ordered Ga0.52 In0.48P/GaAs are measured at low temperatures. The samples with values of degree of order (S) from 0.22 to 0.64 are used. Both of the FWHM and the lifetime increase with increasing the degree of order. Variations of the ordered state with increasing ordering are discussed and they suggest the FWHM and the lifetimes decrease beyond S≑0.5. They are shown in this experimental study
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; gallium compounds; indium compounds; order-disorder transformations; photoluminescence; semiconductor heterojunctions; spectral line breadth; FWHM; Ga0.52In0.48P-GaAs; Ga0.52In0.48P/GaAs; PL spectra; carrier lifetime; full width at half maximum; low temperature; ordered states; ordering dependence; photoluminescence; spontaneously ordered Ga0.52In0.48P/GaAs; Atom optics; Atomic layer deposition; Cities and towns; Epitaxial growth; Gallium arsenide; Laser excitation; Laser mode locking; Optical superlattices; Photoluminescence; Zinc;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947137
