Absorption dichroism of thin CdS films formed by pulsed-laser deposition

Author

Ullrich, B. ; Sakai, H.

Author_Institution

Dept. of Phys. & Astron., Bowling Green State Univ., OH, USA

fYear

2000

fDate

2000

Firstpage

115

Lastpage

118

Abstract

Mastering of anisotropies of thin semiconducting films is of considerable interest with respect to photonic materials engineering. The crystallographic orientation, i.e. absorption dichroism, of CdS films formed by pulsed-laser deposition is adjustable by the laser fluence applied for the ablation. Films formed with a fluence of 2 and 4 J cm^-2 at 355 nm, exhibit an orientation perpendicular and parallel with respect to the surface of the glass substrate. At 3 J cm ^-2, the films contain sections of both orientations. Photocurrent and transmission spectroscopy show that the films reveal the same grade of dichroism as single crystals

Keywords

II-VI semiconductors; cadmium compounds; dichroism; optical films; photoconductivity; pulsed laser deposition; semiconductor thin films; 355 nm; CdS; absorption dichroism; anisotropies; crystallographic orientation; glass substrate; laser fluence; photocurrent; photonic materials engineering; pulsed-laser deposition; thin CdS films; thin semiconducting films; transmission spectroscopy; Absorption; Anisotropic magnetoresistance; Crystalline materials; Crystallography; Optical materials; Optical pulses; Pulsed laser deposition; Semiconductivity; Semiconductor films; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947139

Filename

947139