Title :
Absorption dichroism of thin CdS films formed by pulsed-laser deposition
Author :
Ullrich, B. ; Sakai, H.
Author_Institution :
Dept. of Phys. & Astron., Bowling Green State Univ., OH, USA
Abstract :
Mastering of anisotropies of thin semiconducting films is of considerable interest with respect to photonic materials engineering. The crystallographic orientation, i.e. absorption dichroism, of CdS films formed by pulsed-laser deposition is adjustable by the laser fluence applied for the ablation. Films formed with a fluence of 2 and 4 J cm-2 at 355 nm, exhibit an orientation perpendicular and parallel with respect to the surface of the glass substrate. At 3 J cm -2, the films contain sections of both orientations. Photocurrent and transmission spectroscopy show that the films reveal the same grade of dichroism as single crystals
Keywords :
II-VI semiconductors; cadmium compounds; dichroism; optical films; photoconductivity; pulsed laser deposition; semiconductor thin films; 355 nm; CdS; absorption dichroism; anisotropies; crystallographic orientation; glass substrate; laser fluence; photocurrent; photonic materials engineering; pulsed-laser deposition; thin CdS films; thin semiconducting films; transmission spectroscopy; Absorption; Anisotropic magnetoresistance; Crystalline materials; Crystallography; Optical materials; Optical pulses; Pulsed laser deposition; Semiconductivity; Semiconductor films; Semiconductor materials;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947139
