• DocumentCode
    3436558
  • Title

    A quantitative modeling of In0.53Ga0.47As/In 0.52Al0.48As multi-quantum well structures using photocurrent and transmission spectra

  • Author

    Tanaka, K. ; Tanoue, Y. ; Shibata, K. ; Ueki, Y. ; Kotera, N. ; Washima, M. ; Nakamura, H. ; Mishima, T.

  • Author_Institution
    Kyushu Inst. of Technol., Iizuka, Japan
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    119
  • Lastpage
    124
  • Abstract
    Optical transition energies were analyzed for In0.53Ga 0.47As/In0.52Al0.48As multi-quantum well structures with photocurrent and transmission. The calculated eigen-energies agreed with experiments for three modulation-doped specimens of different carrier concentrations. Our modeling that was expressed with absorption coefficients, reproduced quantitatively the transmission experiments at any temperature
  • Keywords
    III-V semiconductors; absorption coefficients; aluminium compounds; carrier density; eigenvalues and eigenfunctions; gallium arsenide; indium compounds; light transmission; photoconductivity; semiconductor quantum wells; semiconductor superlattices; In0.53Ga0.47As-In0.52Al0.48 As; In0.53Ga0.47As/In0.52Al0.48 As; MQW; absorption coefficients; carrier concentrations; eigen-energies; multi-quantum well structures; optical transition energies; photocurrent; quantitative modeling; three modulation-doped specimens; transmission spectra; Absorption; Indium phosphide; Optical design; Optical modulation; Optoelectronic devices; Photoconductivity; Photodetectors; Quantum well devices; Quantum well lasers; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 2000 IEEE International Symposium on
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    0-7803-6258-6
  • Type

    conf

  • DOI
    10.1109/ISCS.2000.947140
  • Filename
    947140
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3436558