Title :
Theoretical investigation of gate dielectrics
Author :
Demkov, Alexander A. ; Zhang, Xiaodong
Author_Institution :
Phys. Sci. Res. Labs., Motorola Inc., Tempe, AZ, USA
Abstract :
We describe a theoretical methodology for screening potential gate dielectric materials. A recently proposed method for constructing realistic structural models of the Si-dielectric interface is used to generate the Si-SiO2-Si and Si-SiON-SiO2-Si model metal-oxide-semiconductor (MOS) structures. We use a ballistic transport approach to investigate the low bias leakage through these ultrathin dielectric layers. We investigate the thermodynamic stability of the SrTiO3-Si interface, and present the first ab-initio study of the structure and electronic properties of crystalline HfO2
Keywords :
MIS structures; ab initio calculations; dielectric thin films; hafnium compounds; high field effects; interface states; interface structure; leakage currents; silicon; silicon compounds; strontium compounds; thermal stability; HfO2; MOS structures; Si-SiO2-Si; Si-SiON-SiO2-Si; Si-dielectric interface; SrTiO3-Si; SrTiO3-Si interface; ab-initio study; ballistic transport approach; crystalline HfO2; gate dielectrics; low bias leakage; realistic structural models; theoretical methodology; thermodynamic stability; ultrathin dielectric layers; Crystallization; Dielectric constant; Dielectric materials; Dielectrics and electrical insulation; High-K gate dielectrics; Lattices; Plasma measurements; Solids; Thermal stability; Thermodynamics;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947146
