A comprehensive DC/RF tunnel diode model and its application to simulate HITFETs (heterostructure integrated tunneling FETs) and quantum-MMIC´s

Author

Deshpande, Mandar R. ; Lewis, Jonathan H. ; Nair, Vijay ; El-Zein, Nada ; Goronkin, Herbert

Author_Institution

Motorola Inc., Tempe, AZ, USA

fYear

2000

fDate

2000

Firstpage

161

Lastpage

166

Abstract

A comprehensive tunnel diode large signal model that incorporates the bias voltage dependence of its RF characteristics is developed. The model consists of a voltage controlled current source and is implemented in the Advanced Design System (ADS) simulation tool. This model is applied to simulate heterostructure integrated tunneling field effect transistor (HITFET) devices and circuits. HITFETs are quantum functional devices realized by monolithically integrating tunnel diodes and FETs. The enhanced functionality of a HITFET is utilized to design novel circuits with reduced complexity and size and having better performance. Many HITFET based circuits, such as voltage controlled oscillators, amplifiers, mixers, and antennas have been proposed and demonstrated. This new technology shows promise for portable communication applications and monolithic microwave integrated circuits (MMICs). This large signal model incorporated in ADS enables designers to simulate monolithic, multifunctional ICs containing tunnel diodes and HITFETs

Keywords

MMIC; integrated circuit modelling; microwave field effect transistors; quantum well devices; semiconductor device models; tunnel diodes; tunnel transistors; Advanced Design System simulation tool; DC/RF tunnel diode model; HITFET; RF characteristics; amplifiers; antennas; bias voltage dependence; circuits; heterostructure integrated tunneling FET; mixers; monolithic microwave integrated circuits; performance; portable communication applications; quantum functional devices; quantum-MMIC; simulation; voltage controlled current source; voltage controlled oscillators; Circuit simulation; Diodes; FETs; Integrated circuit technology; MMICs; RF signals; Radio frequency; Tunneling; Voltage control; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947147

Filename

947147