Title :
SISSSI-A tool for dynamic electro-thermal simulation of analog VLSI cells
Author :
Székely, V. ; Páhi, A. ; Poppe, A. ; Rencz, M. ; Csendes, A.
Author_Institution :
Dept. of Electron Devices, Tech. Univ. Budapest, Hungary
Abstract :
Summary form only given. With the decreasing feature sizes and increasing packaging densities, thermal effects influence more and more the operation of integrated circuits. The accurate consideration of thermal effects while predicting the electrical behaviour of the ICs became crucial in case of high performance integrated circuits both for analog and digital ones. The SISSSI electro-thermal simulator family can be applied for the above purpose, both for analog and digital designs. The common feature of the SISSSI versions (SISSSI-Classic and SISSSI-Logitherm) is that they construct the layout based thermal model of the IC automatically and consider accurately the effect of the chip encapsulation as well. Here we present the developments in the SISSSI-Classic version which is aimed at device level (analog) electro-thermal simulation
Keywords :
VLSI; analogue integrated circuits; circuit analysis computing; encapsulation; integrated circuit modelling; thermal analysis; SISSSI-Classic; analog IC simulation; analog VLSI cells; chip encapsulation; device level simulation; dynamic electro-thermal simulation; integrated circuits; layout based thermal model; thermal effects; Analog integrated circuits; Circuit simulation; Digital integrated circuits; Electron devices; Encapsulation; Integrated circuit modeling; Integrated circuit packaging; Semiconductor device measurement; Steady-state; Very large scale integration;
Conference_Titel :
European Design and Test Conference, 1997. ED&TC 97. Proceedings
Conference_Location :
Paris
Print_ISBN :
0-8186-7786-4
DOI :
10.1109/EDTC.1997.582430