Title :
MOVPE based Zn diffusion into InP and InAsP/InGaAs heterostructures
Author :
Vanhollebeke, K. ; Moerman, I. ; Van Daele, P. ; Demeester, P.
Author_Institution :
Dept. of Inf. Technol., Ghent Univ., Belgium
Abstract :
Zinc incorporation by post-growth MOVPE (metal-organic vapor phase epitaxy) based diffusion using DEZ (diethylzinc) as precursor into InP and InAs0.60P epitaxial layers, grown by low pressure atmospheric MOVPE, has been studied systematically. High hole concentration levels of respectively 1.7×1019 and 6×1018 cm-3 are obtained for InAs0.60 P and InP. Diffusion depths were measured using cleave-and-stain techniques, electrochemical profiling, resistivity measurements and secondary ion mass spectroscopy. Hall measurements were used to check the hole concentrations. The diffusion depth can be controlled reproducibly within the investigated range from 0.5 to over 2.0 μm. The diffusion coefficients for InP and InAs0.60P were derived and the influence of the dislocation density of the InAs0.60P layers on the Zn diffusion was investigated
Keywords :
Hall effect; III-V semiconductors; MOCVD; arsenic compounds; diffusion; diffusion barriers; dislocation density; doping profiles; hole density; impurity-dislocation interactions; indium compounds; p-i-n photodiodes; secondary ion mass spectra; semiconductor epitaxial layers; zinc; 0.5 to 2.0 micron; Hall measurements; InAs0.60P epitaxial layers; InAs0.60P:Zn; InAsP/InGaAs heterostructures; InAsP:Zn-InGaAs; InP; InP epitaxial layers; InP:Zn; Zn diffusion; cleave-stain techniques; diethylzinc; diffusion coefficients; diffusion depths; dislocation density; electrochemical profiling; hole concentration; low pressure atmospheric MOVPE; post-growth MOVPE; resistivity measurements; secondary ion mass spectroscopy; Atmospheric measurements; Conductivity measurement; Epitaxial growth; Epitaxial layers; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Mass spectroscopy; Substrates; Zinc;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947155
