DocumentCode
3436862
Title
Selective MOVPE growth of (Al)GaAs using DMGaCl and DMAlCl
Author
Philippens, M. ; Giesen, Ch. ; Gerard, B. ; Rushworth, S. ; Heime, K.
Author_Institution
Inst. fur Halbleitertechnik, Tech. Hochschule Aachen, Germany
fYear
2000
fDate
2000
Firstpage
211
Lastpage
216
Abstract
We report on the selective growth using the precursors dimethylgallium-chloride and dimethylaluminumchloride. They were selected to obtain good selectivity together with high growth rates, without using elevated source temperatures. The vapour pressures of these precursors were determined. The need for high growth temperatures was demonstrated. Growth rates of more than 5 μm/h were achieved. An influence of the stripe orientation on the morphology was observed for the growth of AlGaAs
Keywords
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; organic compounds; semiconductor growth; semiconductor thin films; surface topography; AlGaAs; DMAlCl; DMGaCl; dimethylaluminumchloride; dimethylgallium-chloride; growth rate; growth temperature; morphology; precursors; selective MOVPE growth; stripe orientation; vapour pressure; Dielectrics; Epitaxial growth; Epitaxial layers; Etching; Fluid flow; Gallium arsenide; Hydrogen; Inductors; Morphology; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location
Monterey, CA
Print_ISBN
0-7803-6258-6
Type
conf
DOI
10.1109/ISCS.2000.947156
Filename
947156
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