Improvement of GaInNAs/GaAs quantum wells by optimizing growth rate in MOCVD

Author

Kawaguchi, Masao ; Miyamoto, Tomoyuki ; Gouardes, Eric ; Schlenker, Dietmar ; Kondo, Takashi ; Koyama, Fumio ; Iga, Kenichi

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

fYear

2000

fDate

2000

Firstpage

217

Lastpage

222

Abstract

We investigated the crystal quality dependence of GaInNAs/GaAs quantum wells (QWs) on the growth rate for metalorganic chemical vapor deposition (MOCVD). GaInNAs QWs were grown under different growth rates of 0.15, 0.2, 0.6 and 1 μm/h. At a growth rate of 0.2 μm/h, GaInNAs QWs showed the smallest degradation on photoluminescence (PL) for elongating the wavelength by increasing nitrogen (N) composition. GaInNAs QW stripe lasers, which employ a GaInNAs double QWs (DQWs) active layer grown at the optimized growth rate, exhibits a threshold current density of 340 A/cm², which is the lowest for MOCVD grown GaInNAs lasers ever reported

Keywords

III-V semiconductors; MOCVD; gallium arsenide; indium compounds; nitrogen compounds; photoluminescence; quantum well lasers; semiconductor growth; semiconductor quantum wells; GaInNAs QW stripe lasers; GaInNAs double QW active layer; GaInNAs-GaAs; GaInNAs/GaAs quantum wells; MOCVD; crystal quality; growth rate optimization; metalorganic chemical vapor deposition; photoluminescence; threshold current density; Gallium arsenide; Inductors; MOCVD; Molecular beam epitaxial growth; Optical buffering; Optical diffraction; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947157

Filename

947157