Title :
Behavior of NBTI under AC dynamic circuit conditions
Author :
Abadeer, W. ; Ellis, W.
Author_Institution :
IBM Microeletronics, Essex Junction, VT, USA
fDate :
30 March-4 April 2003
Abstract :
The NBTI mechanism was investigated for a 5 nm gate oxide technology under AC dynamic circuit conditions in the frequency range of 2 MHz to 20 MHz and device "ON" duty factor in the range of 30% to 70%. The increase in the magnitude of threshold voltage, and the decrease in device current under AC operation are generally lower than that of DC operation by 3× or higher. The time power function dependency of the degradation at sufficient stress times is lower than that of DC operation. These results indicate that more emphasis needs to be placed on AC behavior of NBTI for scaled CMOS technologies.
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit reliability; semiconductor device models; thermal stresses; 0.25 micron; 2 to 20 MHz; 5 nm; 5 nm gate oxide technology; AC dynamic circuit conditions; NBTI mechanism; ON duty factor; Si:B; circuit reliability; degradation; device current; negative bias temperature instability; physical model; polysilicon:B gated PFETs; scaled CMOS technologies; threshold voltage; time power function dependency; CMOS technology; Circuits; Degradation; Frequency; Microelectronics; Niobium compounds; Predictive models; Stress; Threshold voltage; Titanium compounds;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN :
0-7803-7649-8
DOI :
10.1109/RELPHY.2003.1197714
