Title :
“Vibrational and optical properties of AlN grown on Si(111)”
Author :
Holtz, M. ; Zollner, S. ; Prokofyeva, T. ; Seon, M. ; Vanbuskirk, J. ; Copeland, K. ; Konkar, A. ; Nikishin, S.A. ; Faleev, N.N. ; Temkin, H.
Author_Institution :
Dept. of Phys., Texas Tech. Univ., Lubbock, TX, USA
Abstract :
We present optical measurements of hexagonal AlN grown by gas-source molecular beam epitaxy on (111)-oriented silicon wafers. Fourier-transform infrared (FTIR) reflectance and absorption measurements are used to determine the E1- and A1-symmetry vibrational energies in AlN (TO and LO). FTIR reflectance data are modeled using a non-isotropic dielectric function. The phonon energies are also measured by Raman scattering, which includes the E2-symmetry phonons, as well as A1(TO), A1(LO), and E1(TO). Ellipsometry measurements between 0.73 and 6.60 eV allow us to determine the optical constants. The energy gap is found to lie between 6.1 and 6.2 eV
Keywords :
Fourier transform spectra; III-V semiconductors; Raman spectra; aluminium compounds; dielectric function; ellipsometry; energy gap; infrared spectra; light absorption; optical constants; phonon spectra; reflectivity; semiconductor epitaxial layers; wide band gap semiconductors; (111)-oriented silicon wafers; 0.73 to 6.6 eV; A1-symmetry vibrational energies; AlN; E1-symmetry vibrational energies; E2-symmetry phonons; FTIR reflectance; Fourier-transform infrared reflectance; Raman scattering; Si; Si(111); absorption measurements; ellipsometry; energy gap; gas-source molecular beam epitaxy; hexagonal AlN grown; nonisotropic dielectric function; optical constants; optical measurements; optical properties; phonon energies; vibrational properties; Dielectric measurements; Electromagnetic wave absorption; Energy measurement; Molecular beam epitaxial growth; Optical scattering; Phonons; Reflectivity; Semiconductor device modeling; Silicon; Vibration measurement;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947164
