Title :
Accurate reliability evaluation of non-uniform ultrathin oxynitride and high-k layers
Author :
Roussel, Philippe ; Degraeve, Robin ; Kerber, Andreas ; Pantisano, Luigi ; Groeseneken, Guido
Author_Institution :
IMEC, Leuven, Belgium
fDate :
30 March-4 April 2003
Abstract :
We present a methodology to separate the tBD-spread caused by wafer non-uniformity from the inherent spread due to the physical breakdown mechanism. The method relies on the area scaling effect and consists of two steps: first the distribution slope is fitted using the entire data set, then the 63%-values are determined at each wafer location. This method is demonstrated to correctly evaluate the reliability of ultra-thin SiO2, oxynitride and high-k dielectrics.
Keywords :
MIS devices; Weibull distribution; alumina; dielectric thin films; maximum likelihood estimation; semiconductor device breakdown; semiconductor device reliability; silicon compounds; 63%-values; SiO2-Al2O3-TiN; SiON; Weibull parameter pairs; area scaling effect; distribution slope; maximum likelihood values; nonuniform ultrathin high-k layers; nonuniform ultrathin oxynitride layers; physical breakdown mechanism; reliability prediction; ultra-thin SiO2; wafer nonuniformity; Area measurement; Dielectric breakdown; Electric breakdown; High K dielectric materials; High-K gate dielectrics; Physics; Plasmas; Position measurement; Q measurement; Tin;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN :
0-7803-7649-8
DOI :
10.1109/RELPHY.2003.1197716
