Title :
Novel dielectric breakdown model of Hf-silicate with high temperature annealing
Author :
Yamaguchi, Takeshi ; Ino, Tsunehiro ; Satake, Hideki ; Fukushima, Noburu
Author_Institution :
Adv. LS1 Technol. Lab., Toshiba Corp., Yokohama, Japan
fDate :
30 March-4 April 2003
Abstract :
The influence of the unavoidable high temperature annealing in the MIS fabrication process on the reliability characteristics of high-k gate dielectrics are thoroughly investigated. In particular, the Qbd distributions are drastically degraded after high temperature annealing in Hf-silicate dielectrics. We propose a novel dielectric breakdown model of high-k gate dielectrics, which may be responsible for the poor Qbd distributions.
Keywords :
MIS capacitors; annealing; dielectric thin films; hafnium compounds; leakage currents; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; Hf-silicate; HfSiO4-Si; MIS capacitors; MIS fabrication process; Qbd distributions; dielectric breakdown model; high temperature annealing; high-k gate dielectrics; reliability characteristics; Annealing; Capacitors; Crystallization; Design for quality; Dielectric breakdown; Dielectric substrates; Electrodes; Fabrication; Hafnium; Temperature;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN :
0-7803-7649-8
DOI :
10.1109/RELPHY.2003.1197717
