A switched-capacitor CMOS voltage reference for ultra low-voltage and ultra low-power operation

Author

Qu, Zihua ; Zhang, Meng ; Wu, Jianhui

Author_Institution

Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China

fYear

2009

fDate

13-16 Dec. 2009

Firstpage

175

Lastpage

178

Abstract

An ultra low-voltage and low-power CMOS voltage reference using subthreshold, body effect and switched-capacitor techniques is proposed in this paper. No resistor and BJT is used in this structure. The proposed circuit has been simulated with Chartered 0.18-Â¿m CMOS process. The simulated results show that the voltage reference can operate with sub-0.6V supply and total supply current is 210nA at 0.58V supply. The temperature coefficient of 7.67ppm/Â°C for a temperature range of -40Â°C to 85Â°C is achieved. The layout area is only 0.018 mm².

Keywords

CMOS integrated circuits; circuit simulation; low-power electronics; switched capacitor networks; CMOS voltage reference; Chartered CMOS process; size 0.18 mum; switched capacitor; temperature -40 degC to 85 degC; ultra low-power operation; ultra low-voltage power operation; voltage 0.58 V; CMOS process; CMOS technology; Circuit simulation; Low voltage; MOSFETs; Resistors; Switched capacitor circuits; Switching circuits; Temperature distribution; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits, and Systems, 2009. ICECS 2009. 16th IEEE International Conference on

Conference_Location

Yasmine Hammamet

Print_ISBN

978-1-4244-5090-9

Electronic_ISBN

978-1-4244-5091-6

Type

conf

DOI

10.1109/ICECS.2009.5410964

Filename

5410964