DocumentCode
3437087
Title
Anomalies on the Zeeman splitting and dielectric response due to the lack of inversion symmetry in narrow-gap semiconductor quantum wells
Author
Lopez-Richard, V. ; Marques, Gil ; Trallero-Giner, C.
Author_Institution
Dept. de Fisica, Univ. Federal de Sao Carlos, Brazil
fYear
2000
fDate
2000
Firstpage
267
Lastpage
271
Abstract
An exhaustive study of magneto-optical properties in Hg1-x CdxTe/CdTe quantum-wells has been developed. The strong interband mixing plays an essential role in defining the shape and the behavior of the dielectric response in this system, allowing for the appearance of spin-flip like excitations. Anomalous crossings of the Landau levels fan in narrow-gap semiconductor heterostructures and a peculiar sign inversion of the effective Lande g-factor as a function of the magnetic field are also predicted in this study. A quantitative evaluation shows that the analyzed effects are very sensitive to the temperature and to the Cd-concentration of the sample
Keywords
II-VI semiconductors; Landau levels; Zeeman effect; cadmium compounds; mercury compounds; narrow band gap semiconductors; semiconductor quantum wells; Cd-concentration; HgCdTe-CdTe; Landau level crossing; Zeeman splitting; dielectric response; effective Lande g-factor; interband mixing; magneto-optical properties; narrow-gap semiconductor quantum wells; spin-flip like excitations; Dielectrics; Magnetic analysis; Magnetic properties; Magnetooptic effects; Optical mixing; Optical modulation; Quantum wells; Shape; Tellurium; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location
Monterey, CA
Print_ISBN
0-7803-6258-6
Type
conf
DOI
10.1109/ISCS.2000.947167
Filename
947167
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