Title :
Characterization of the VT-instability in SiO2/HfO2 gate dielectrics
Author :
Kerber, A. ; Cartier, E. ; Pantisano, L. ; Rosmeulen, M. ; Degraeve, R. ; Kauerauf, T. ; Groeseneken, G. ; Maes, H.E. ; Schwalke, U.
Author_Institution :
Infineon Technol. AG, Leuven, Belgium
fDate :
30 March-4 April 2003
Abstract :
The electrical stability of CMOS devices with conventional gate dielectrics is commonly studied using static (DC) measurement techniques. By applying the same methods to MOS devices with alternative gate dielectrics, it has been shown that alternative gate stacks suffer from severe charge trapping and that the trapped charge is not stable, leading to fast transient charging components. In this paper, time-resolved measurement techniques down to the μs time range are applied to capture the fast transient component of the charge trapping observed in SiO2/HfO2 dual layer gate stacks. Furthermore, its impact on the device performance and reliability of n-channel FETs is discussed.
Keywords :
MOSFET; capacitance; dielectric thin films; hafnium compounds; interface states; semiconductor device breakdown; semiconductor device measurement; semiconductor device reliability; silicon compounds; transient analysis; C-V hysteresis; CMOS devices; MOS devices; SiO2-HfO2; SiO2/HfO2 dual layer gate stacks; SiO2/HfO2 gate dielectrics; alternative gate dielectrics; breakdown statistics; charge trapping; defect band; device performance; electrical stability; fast transient charging components; n-channel FET; reliability; static DC measurement techniques; threshold voltage instability; time-resolved measurement techniques; trapped charge instability; Capacitance-voltage characteristics; Charge measurement; Circuits; Current measurement; Dielectrics; Energy measurement; FETs; Frequency measurement; Hafnium oxide; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN :
0-7803-7649-8
DOI :
10.1109/RELPHY.2003.1197718
