A charge sampling baseband filter using a new high linearity Gm for multimode receiver

Author

Shah, Utkarsh ; El-Sankary, Kamal ; El-Masry, Ezz

Author_Institution

Dept. of Electr. & Comput. Eng., Dalhousie Univ., Halifax, NS, Canada

fYear

2009

fDate

13-16 Dec. 2009

Firstpage

171

Lastpage

174

Abstract

This paper presents charge sampling circuit using new high linearity transconductor (Gm) cell that has third order distortion cancellation. The proposed Gm-cell has almost constant transconductance value over Â±200 mV input voltage range. The charge sampling circuit has SNDR around 73 dB with ENOB of 11 bits and it consumes 4.38 mW power. Its input referred noise is 15.29 nV/Â¿Hz and noise figure is 24.67 dB at 81 MHz. This architecture is used to implement a programmable analog baseband filter for Bluetooth and UMTS. Simulations were carried out using the TSMC 0.18 Â¿m CMOS technology with supply voltage of 1.6 V.

Keywords

Bluetooth; CMOS integrated circuits; analogue-digital conversion; programmable filters; radio receivers; signal processing equipment; Bluetooth; CMOS technology; ENOB; SNDR; TSMC; UMTS; charge sampling baseband filter; charge sampling circuit; frequency 81 MHz; high linearity transconductor cell; input referred noise; multimode receiver; noise figure; noise figure 24.67 dB; power 4.38 mW; programmable analog baseband filter; size 0.18 mum; supply voltage; third order distortion cancellation; transconductance value; voltage 1.6 V; word length 11 bit; Baseband; CMOS technology; Circuits; Filters; Linearity; Noise figure; Sampling methods; Transconductance; Transconductors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits, and Systems, 2009. ICECS 2009. 16th IEEE International Conference on

Conference_Location

Yasmine Hammamet

Print_ISBN

978-1-4244-5090-9

Electronic_ISBN

978-1-4244-5091-6

Type

conf

DOI

10.1109/ICECS.2009.5410967

Filename

5410967