Title :
Capacitance-voltage spectroscopy of self assembled ordered arrays of quantum dots
Author :
Kouklin, N. ; Bandyopadhyay, Supriyo
Author_Institution :
Dept. of Electr. Eng., Nebraska Univ., Lincoln, NE, USA
Abstract :
Compound semiconductor quantum dots, self-assembled into a two-dimensional regimented hexagonal close-packed array, have been studied by capacitance-voltage spectroscopy. The dots were synthesized by electrodepositing a semiconductor in a nanoporous alumite template formed by the anodization of aluminum. The capacitance-voltage characteristic indicates that the dots have n-type carriers and the Fermi level is unpinned. The capacitance traces out the regions of accumulation, depletion and inversion showing that carrier modulation is possible with a gate potential. Thus, these structures are ideally suited for quantum-dot flash memories
Keywords :
Fermi level; II-VI semiconductors; cadmium compounds; electrodeposition; flash memories; self-assembly; semiconductor quantum dots; 2D regimented hexagonal close-packed array; CdS; Fermi level; anodization; capacitance; capacitance-voltage spectroscopy; carrier modulation; electrodeposition; flash memories; gate potential; nanoporous alumite template; quantum dots; self assembled ordered arrays; Aluminum; Atomic force microscopy; Capacitance-voltage characteristics; Flash memory; Nanoporous materials; Quantum capacitance; Quantum dots; Self-assembly; Spectroscopy; US Department of Transportation;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947173