Title :
Vapor phase synthesis of polycrystalline II-VI semiconductor nanoparticles in a counterflow jet reactor
Author :
Sarigiannis, D. ; Mountziaris, T.J. ; Kioseoglou, G. ; Petrou, A.
Author_Institution :
Dept. of Chem. Eng., State Univ. of New York, Buffalo, NY, USA
Abstract :
This paper addresses the vapor-phase synthesis of polycrystalline ZnSe nanoparticles. The particles were grown at room temperature and at a pressure of 125 torr in a counterflow jet reactor and collected by impact on a silicon wafer. The precursors used in this study were vapors of (CH3)2Zn:[N(C2H5)3 ]3 and H2Se gas diluted in hydrogen. These precursors have been used in the past for metalorganic vapor phase epitaxy (MOVPE) of ZnSe thin films. Transmission electron microscopy (TEM), electron diffraction, and Raman spectroscopy were used to characterize the particles. The reactor was operated in a continuous, steady-state mode using a gas delivery system that is typical for MOVPE systems
Keywords :
II-VI semiconductors; Raman spectra; electron diffraction; nanostructured materials; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; vapour phase epitaxial growth; zinc compounds; 125 torr; 293 to 298 K; MOVPE; Raman spectroscopy; TEM; ZnSe; counterflow jet reactor; electron diffraction; polycrystalline II-VI semiconductor nanoparticles; steady-state mode; thin films; vapor-phase synthesis; Electrons; Epitaxial growth; Epitaxial layers; Hydrogen; Inductors; Nanoparticles; Silicon; Temperature; Transistors; Zinc compounds;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947176
