Title :
A 90 nm CMOS technology with modular quadruple gate oxides for advanced SoC applications
Author :
Mirabedini, M.R. ; Gopinath, V.P. ; Kamath, A. ; Lee, M.Y. ; Hsia, W. J J ; Hornback, V. ; Le, Y. ; Badowski, A. ; Baylis, B. ; Li, E. ; Prasad, S. ; Kobozeva, O. ; Haywood, J. ; Catabay, W. ; Yeh, W.C.
Author_Institution :
Adv. Technol. Dev., LSI Logic Corp., Milpitas, CA, USA
fDate :
30 March-4 April 2003
Abstract :
This paper describes a 90 nm System-on-a-chip (SoC) technology with modular quadruple gate oxides (16, 28, 50, 64 Å) on the same chip allowing integration of optimized transistors operating at supply voltages of 1, 1.2, 1.8, 2.5 and 3.3 Volts for different circuit applications. The proposed modular gate oxide process with pre-gate nitrogen implant was shown to be superior to conventional grow-etch-grow approach in terms of gate leakage current, integrity and interface quality of the multiple gate oxides. A high current drive of 1020/390 μA/μm was demonstrated for N/P channel core transistors.
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit reliability; ion implantation; leakage currents; oxidation; semiconductor device breakdown; system-on-chip; 1 to 3.3 V; 16 to 64 A; 90 nm; 90 nm CMOS technology; 90 nm system-on-a-chip technology; N/P channel core transistors; advanced SoC applications; gate leakage current; high current drive; modular gate oxide process; modular quadruple gate oxides; multiple gate oxide integrity; multiple gate oxide interface quality; optimized transistor integration; pre-gate nitrogen implant; supply voltages; CMOS technology; Implants; Large scale integration; Leakage current; Logic circuits; Nickel; Nitrogen; Oxidation; System-on-a-chip; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN :
0-7803-7649-8
DOI :
10.1109/RELPHY.2003.1197729
