Title :
Characteristics of highly strained InGaP/InGaAs pseudomorphic high electron mobility transistors grown on patterned GaAs substrates
Author :
Kim, Sang-Soon ; Jo, Sung-June ; Song, Jong-In
Author_Institution :
Dept. of Inf. & Commun, K-JIST, Kwangju, South Korea
Abstract :
Highly strained InGaP/In0.33Ga0.67As pseudomorphic high electron mobility transistor (p-HEMT) structures were grown on patterned and non-patterned GaAs substrates. Performance of the highly strained p-HEMTs grown on patterned substrates was compared with those of the highly strained p-HEMTs and conventional InGaP/In0.22 Ga0.78As p-HEMTs grown on non-patterned substrates. The highly strained p-HEMTs grown on patterned substrates showed substantial improvements in dc (transconductance and drain saturation current) and rf(cut-off frequency: fT and maximum oscillation frequency: f max) performances as compared with those of the p-HEMTs grown on non-patterned substrates. The results indicate the potential of high-performance p-HEMTs having a high strain in the channel using an epitaxial growth on patterned substrates
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; GaAs; InGaP-In0.33Ga0.67As; cut-off frequency; drain saturation current; epitaxial growth; highly strained pseudomorphic HEMT; nonpatterned GaAs substrates; oscillation frequency; patterned GaAs substrates; transconductance; Capacitive sensors; Electron mobility; Frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; PHEMTs; Substrates; Transconductance;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947179
