Title :
Low actuation voltage silicon carbide RF switches for MEMS above IC
Author :
Cicek, P.-V. ; Mahdavi, S. ; Nabki, F. ; El-Gamal, M.N.
Author_Institution :
McGill Univ., Montreal, QC, Canada
Abstract :
This paper presents a CMOS-compatible RF MEMS technology to build low actuation voltage switches. SiC increases the stiffness of the switches to improve reliability and durability. A design methodology is introduced to optimize tradeoffs between important system criteria, i.e., voltage levels, signal performance and switching speed. Simulations are used to evaluate devices designed with the technology.
Keywords :
micromechanical devices; semiconductor switches; CMOS-compatible RF MEMS technology; complementary metal-oxide-semiconductor; low actuation voltage silicon carbide RF switches; microelectromechanical system; system criteria; CMOS integrated circuits; CMOS technology; Design methodology; Low voltage; Micromechanical devices; Radio frequency; Radiofrequency integrated circuits; Radiofrequency microelectromechanical systems; Silicon carbide; Switches;
Conference_Titel :
Electronics, Circuits, and Systems, 2009. ICECS 2009. 16th IEEE International Conference on
Conference_Location :
Yasmine Hammamet
Print_ISBN :
978-1-4244-5090-9
Electronic_ISBN :
978-1-4244-5091-6
DOI :
10.1109/ICECS.2009.5410976
