DocumentCode
3437326
Title
Low actuation voltage silicon carbide RF switches for MEMS above IC
Author
Cicek, P.-V. ; Mahdavi, S. ; Nabki, F. ; El-Gamal, M.N.
Author_Institution
McGill Univ., Montreal, QC, Canada
fYear
2009
fDate
13-16 Dec. 2009
Firstpage
223
Lastpage
226
Abstract
This paper presents a CMOS-compatible RF MEMS technology to build low actuation voltage switches. SiC increases the stiffness of the switches to improve reliability and durability. A design methodology is introduced to optimize tradeoffs between important system criteria, i.e., voltage levels, signal performance and switching speed. Simulations are used to evaluate devices designed with the technology.
Keywords
micromechanical devices; semiconductor switches; CMOS-compatible RF MEMS technology; complementary metal-oxide-semiconductor; low actuation voltage silicon carbide RF switches; microelectromechanical system; system criteria; CMOS integrated circuits; CMOS technology; Design methodology; Low voltage; Micromechanical devices; Radio frequency; Radiofrequency integrated circuits; Radiofrequency microelectromechanical systems; Silicon carbide; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits, and Systems, 2009. ICECS 2009. 16th IEEE International Conference on
Conference_Location
Yasmine Hammamet
Print_ISBN
978-1-4244-5090-9
Electronic_ISBN
978-1-4244-5091-6
Type
conf
DOI
10.1109/ICECS.2009.5410976
Filename
5410976
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