Title :
First demonstration of GaAs CMOS
Author :
Hong, M. ; Baillargeon, J.N. ; Kwo, J. ; Mannaerts, J.P. ; Cho, A.Y.
Author_Institution :
Bell Labs, Lucent Technol., Murray Hill, NJ, USA
Abstract :
Using Ga2O3(Gd2O3) as a gate dielectric and conventional ion implantation for source, drain, and isolation, we have fabricated and demonstrated a GaAs complementary metal-oxide-semiconductor field-effect-transistor (CMOS) inverter
Keywords :
CMOS integrated circuits; III-V semiconductors; MOSFET; carrier mobility; gallium arsenide; invertors; ion implantation; CMOS inverter; Ga2O3; GaAs; Gd2O3; MOSFET; carrier mobility; ion implantation; CMOS technology; Circuits; Dielectric substrates; Dielectrics and electrical insulation; Gallium arsenide; Inverters; Isolation technology; MOSFETs; Power dissipation; Threshold voltage;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947180
