• DocumentCode
    3437332
  • Title

    First demonstration of GaAs CMOS

  • Author

    Hong, M. ; Baillargeon, J.N. ; Kwo, J. ; Mannaerts, J.P. ; Cho, A.Y.

  • Author_Institution
    Bell Labs, Lucent Technol., Murray Hill, NJ, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    345
  • Lastpage
    350
  • Abstract
    Using Ga2O3(Gd2O3) as a gate dielectric and conventional ion implantation for source, drain, and isolation, we have fabricated and demonstrated a GaAs complementary metal-oxide-semiconductor field-effect-transistor (CMOS) inverter
  • Keywords
    CMOS integrated circuits; III-V semiconductors; MOSFET; carrier mobility; gallium arsenide; invertors; ion implantation; CMOS inverter; Ga2O3; GaAs; Gd2O3; MOSFET; carrier mobility; ion implantation; CMOS technology; Circuits; Dielectric substrates; Dielectrics and electrical insulation; Gallium arsenide; Inverters; Isolation technology; MOSFETs; Power dissipation; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 2000 IEEE International Symposium on
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    0-7803-6258-6
  • Type

    conf

  • DOI
    10.1109/ISCS.2000.947180
  • Filename
    947180
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3437332