Title :
Vertical cavity surface emitting laser with AlGaInAs/InP Bragg mirrors fabricated for operation at 1.55 μm
Author :
Linnik, M. ; Christou, A.
Author_Institution :
Dept. of Mater. & Nucl. Eng., Maryland Univ., College Park, MD, USA
Abstract :
The authors present the design and performance of a low threshold selectively oxidized Vertical Cavity Surface Emitting Laser (VCSEL) fabricated for operation at a wavelength of 1.55 μm. The device is based on III-V quaternary semiconductor alloys and is grown by Molecular Beam Epitaxy technique. The theoretical investigation of the optical properties of the compound semiconductor alloys allows one to select the optimum materials for highly reflective Bragg mirrors. The simulation of the designed VCSEL performance has been carried out by evaluation of the important laser characteristics such as threshold gain, threshold current density and external quantum efficiency
Keywords :
III-V semiconductors; aluminium compounds; current density; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser mirrors; laser theory; molecular beam epitaxial growth; optical design techniques; optical fabrication; semiconductor device models; semiconductor growth; surface emitting lasers; 1.55 mum; AlGaInAs-InP; AlGaInAs/InP Bragg mirrors; III-V quaternary semiconductor alloys; VCSEL; design; external quantum efficiency; highly reflective Bragg mirrors; low threshold selectively oxidized vertical cavity surface emitting laser; molecular beam epitaxy; simulation; threshold current density; threshold gain; vertical cavity surface emitting laser; III-V semiconductor materials; Indium phosphide; Laser theory; Optical design; Optical surface waves; Semiconductor lasers; Semiconductor materials; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947186
